advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 600v fast switching characteristics r ds(on) 5 simple drive requirement i d 2a description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w w/ e as single pulse avalanche energy 2 mj i ar avalanche current a t stg t j operating junction temperature range thermal data symbol value unit rthj-c thermal resistance junction-case max. 6.25 /w rthj-a thermal resistance junction-ambient max. 110 /w data & specifications subject to change without notice ap4002h/j -55 to 150 2 8 20 rohs-compliant product 0.16 parameter 200420072-1/4 parameter rating 600 30 -55 to 150 20 2 linear derating factor storage temperature range g d s a p4002 series are specially designed as chopper regulator, dc/dc converter and power drive application. the apec mosfet provide the best conbination of fast switching, ruggedized design and cost-effectiveness. g d s to-251(j) g d s to-252(h)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 600 - - v r ds(on) static drain-source on-resistance v gs =10v, i d =1.0a - - 5 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =2.0a - 1.5 - s i dss drain-source leakage current v ds =600v, v gs =0v - - 100 ua i gss gate-source leakage v gs =30v - - 1 ua q g total gate charge 3 i d =2a - 12 19 nc q gs gate-source charge v ds =480v - 2 - nc q gd gate-drain ("miller") charge v gs =10v - 5.5 - nc t d(on) turn-on delay time 3 v dd =200v - 10 - ns t r rise time i d =1a - 12 - ns t d(off) turn-off delay time r g =50 ? v gs =10v - 52 - ns t f fall time r d =200 -19- ns c iss input capacitance v gs =0v - 375 600 pf c oss output capacitance v ds =10v - 170 - pf c rss reverse transfer capacitance f=1.0mhz - 45 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 3 t j =25 : , i s =2a, v gs =0v - - 1.5 v t rr reverse recovery time 3 i s =2a, v gs =0 v , - 340 - ns q rr reverse recovery charge di/dt=100a/s - 2.2 - uc notes: 1.pulse width limited by max. junction temperature. 2.starting t j =25 o c , v dd =50v , l=10mh , r g =25 3.pulse test ap4002h/j this product is electrostatic sensitive, please handle with caution. this product has been qualified for use in consumer applications. applications or use in life support or other similar mission-critical devices or systems are not authorized. 2/4
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 ap4002h/j 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d =1a v g =10v 0 0.5 1 1.5 2 04812 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g = 4.5 v 0 0.5 1 1.5 2 0 4 8 1216202428 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7.0v 6.0v 5.0v v g = 4.5 v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j = 150 o c t j = 25 o c 0.4 0.6 0.8 1 1.2 -50 0 50 100 150 t j , junction temperature ( o c ) normalized v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4/4 ap4002h/j 0.01 0.1 1 10 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 4 8 12 16 0 4 8 12 16 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =2a v ds =480v 1 10 100 1000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge
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